2003. 8. 25 1/2 semiconductor technical data PG22KSSMA single line tvs diode for esd protection revision no : 0 protection of voltage sensitive components. features 1500 watts peak pulse power (tp=8/20 s) low profile package. transient protection for data line to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 42.3a(tp=8/20ns) applications devices for unidirectional applications. automotive controller. notebooks, desktops, & servers. maximum rating (ta=25 ) sma dim millimeters a b c d e f g 4.5 0.2 2.6 0.2 1.5 0.2 5.0 0.3 1.2 0.3 2.0 0.2 0 ~ 0.15 h r 0.5 a b c h d e e 1 2 f g + _ + _ + _ + _ + _ + _ 1. anode 2. cathode electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse power (tp=8/20 s) * p pk 1500 w peak pulse current (tp=8/20 s) i pp 42.3 a operating temperature t j -55 150 storage temperature t stg -55 150 type name marking 22s lot no. 21 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 22 v reverse breakdown voltage v br i t =1ma 24.4 - - v reverse leakage current i r v rwm =22v - - 5 a clamping voltage v c i pp =42.3a, tp=8/20 s - - 35.5 v junction capacitance c j v r =0v, f=1mhz - - 1000 pf * notes) (1) derated above ta=25 per power derating curve. (2) mounted on 0.31 0.31?(8.0 8.0 ) copper pads to each terminal.
2003. 8. 25 2/2 PG22KSSMA revision no : 0 non-repetitive peak pulse power vs. pulse time pulse duration tp ( s) 0.1 1 100 10 pk peak pulse power p (kw) 10k 1k 0.1 1 10 100 peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i (%) 0 pp 110 70 50 25 0 ambient temperature ta ( c) power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 peak pulse current i (%) 0 pp 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60
|
